Charge Distribution in C60 Crystal Doped by Electric Field

The calculations of the charge distribution in the C60-based FET structure are presented. A simple model is proposed to describe the distribution of injected electrons or holes between two-dimensional layers. The calculations show that the relative layer charges are independent on the total amount of injected charges. The charge density is maximal on the surface layer and drops exponentially with the depth increase. The relative portions of injected charge involved in the top layer are 73 and 64 per cent in the case of electron and hole injection, respectively. Thus, the degree of charge localization on the crystal surface turns to be markedly different from the result obtained earlier within the tight-binding model predicting near-complete localization for the charge concentration providing superconductivity.